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A novel organo-lithium based production method for trimethylindium

: Reier, F.W.; Wolfram, P.; Schumann, H.

Journal of Crystal Growth 93 (1988), Nr.1-4, S.41-44
ISSN: 0022-0248
International Conference on Metalorganic Vapor Phase Epitaxy <4, 1988, Hakone, Japan>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()
chemical reaction; materials preparation; organometallic compounds; vapour phase epitaxial growth; synthesis; unsolvated trimethylindium; methyllithium; movpe; electron mobilities; inp; incl3

A novel method for the synthesis of unsolvated trimethylindium using indium trichloride and methyllithium as starting materials is described, which is capable of producing high-purity material for MOVPE. The method is distinguished by its simplicity and safety. The crucial point of this synthetic way is the reaction of indium trichloride with four equivalents of methyllithium to yield trimethylindium stabilized by coordination on one methyllithium rather than ether. Additional diethylether coordinated to the Li(In(CH3)4) formed can be removed in vacuo under mild conditions. Pure lithium- and ether-free trimethylindium is then formed by reacting the Li(In(CH3)4) complex with indium trichloride and subsequent fractionation. InP layers grown from this material by atmospheric pressure MOVPE exhibited electron mobilities of >105 cm2 V-1 s-1 at 77 K.