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1989
Journal Article
Titel
Butt coupled photodiodes integrated with Y-branched optical waveguides on InP
Abstract
A pair of GaInAs photodiodes was integrated to the output waveguides of an optical Y-branch. Light was butt coupled to the photodetective zone which was formed by GaInAs LPE growth refilling deep etched holes. Total light conversion with more than 90% internal quantum efficiency at 1.55 mu m wavelength was achieved. The best diodes exhibited dark currents of 1 nA at -10 V bias voltage.
Tags
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gallium arsenide
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iii-v semiconductors
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indium compounds
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integrated optoelectronics
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liquid phase epitaxial growth
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optical communication equipment
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optical waveguides
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photodiodes
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semiconductor technology
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substrates
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butt coupled photodiodes
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photodiodes integration to waveguides
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oeics
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semiconductors
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y-branched optical waveguides
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optical y-branch
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photodetective zone
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GaInAs lpe growth refilling deep etched holes
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internal quantum efficiency
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dark currents
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bias voltage
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90 percent
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1.55 micron
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1 na
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-10 v
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GaInAs photodiodes
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InP substrate