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1987
Conference Paper
Titel
Current-injection analysis of invertible InGaAsP/InP double-heterostructure bipolar transistors
Abstract
High-gain invertible double-heterostructure bipolar transistors (DHBT) aimed at laser driver applications have been fabricated on the InGaAsP/InP material system. Forward and reverse current gain evaluation was supported by analyses of forward I-V curves of test-diodes representing the injecting heterojunctions and a current blocking InP homojunction diode. The influence of different LPE methods (step cooling, two-phase solution technique) on the static performance of the DHBTs was studied.
Language
English
Tags
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driver circuits
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gallium arsenide
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heterojunction bipolar transistors
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iii-v semiconductors
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indium compounds
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integrated optoelectronics
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liquid phase epitaxial growth
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optical communication equipment
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semiconductor device models
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semiconductor technology
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current injection analysis
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model
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invertible transistors
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oeic
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semiconductors
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forward current gain
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double-heterostructure bipolar transistors
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dhbt
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laser driver applications
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reverse current gain
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forward i-v curves
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test-diodes
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injecting heterojunctions
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current blocking InP homojunction diode
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lpe methods
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step cooling
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two-phase solution technique
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static performance
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InGaAsP-InP