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Beryllium and manganese diffusion in Ga0.47In0.53As during MBE-growth

 

Heuberger, A.; Ryssel, H.; Lange, P.:
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings
Berlin/West: Springer, 1989
ISBN: 3-540-51000-1
S.55-58
European Solid State Device Research Conference <19, 1989, Berlin>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
beryllium; diffusion in solids; doping profiles; gallium arsenide; iii-v semiconductors; indium compounds; manganese; molecular beam epitaxial growth; secondary ion mass spectra; semiconductor growth; c-v measurement; interface diffusion; diffusion; MBE-growth; SIMS; surface accumulation; doping concentration; surface roughening; Ga0.47In0.53As; GaInAs:Be; GaInAs:Mn

Abstract
Redistribution of Mn and Be doping profiles during growth of MBE GaInAs have been analyzed by SIMS and CV-measurements. Contribution of diffusion in the homomaterial, diffusion across the heterointerface, and surface accumulation are clearly detected. The doping concentration related to the onset of the effects observed is in good agreement with the onset of surface roughening. Diffusion and accumulation are more pronounced in the case of Mn doping.

: http://publica.fraunhofer.de/dokumente/N-13804.html