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Doping and diffusion behaviour of Fe in MOVPE grown InP layers

: Franke, D.; Harde, P.; Wolfram, P.; Grote, N.


Journal of Crystal Growth 100 (1990), Nr.3, S.309-12
ISSN: 0022-0248
Fraunhofer HHI ()
diffusion in solids; doping profiles; getters; heat treatment; iii-v semiconductors; indium compounds; iron; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; movpe grown layers; doping behaviour; semiconductor; diffusion characteristics; ap-movpe; sims technique; depth profiles; linear doping curve; gettering effect; high-temperature heat treatment; inp:fe

Doping and diffusion characteristics of Fe in semi-insulating AP-MOVPE grown InP layers were assessed using the SIMS technique. Fairly flat Fe depth profiles and a linear doping curve were obtained at concentrations of up to the lower range of 1017 cm-3. Accumulation of Fe at the substrate/layer interface was found on quite a few samples indicating a gettering effect of the substrate. Very little, if not negligible, diffusion was observed on alternately Fe-doped/undoped structures even after high-temperature heat treatment as long as the Fe content was in the midrange of 1016 cm-3, or lower.