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Superior microwave performance of InGaAs JFETs grown by MBE

: Trommer, D.; Umbach, A.; Passenburg, W.; Mekonnen, G.; Unterborsch, G.


Electronics Letters 26 (1990), Nr.11, S.734-6
ISSN: 0013-5194
Fraunhofer HHI ()
gallium arsenide; iii-v semiconductors; indium compounds; integrated optoelectronics; junction gate field effect transistors; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; oeic; microwave performance; jfets; optimised mbe process; gate layer growth; self-aligning technique; 28 GHz; 38 GHz; InGaAs; InP based optoelectronic integration

The realisation of high performance InGaAs JFETs designed for InP based optoelectronic integration is reported. An optimised MBE process for the gate layer growth is presented. JFETs fabricated by using a self-aligning technique exhibit very high cut-off frequencies of fT=28 GHz and fMAX=38 GHz.