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InP based integrated laser driver circuit

: Paraskevopoulos, A.; Bach, H.G.; Mekonnen, G.; Schroeter-Janssen, H.; Fiedler, F.; Grote, N.

Heuberger, A.; Ryssel, H.; Lange, P.:
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings
Berlin/West: Springer, 1989
ISBN: 3-540-51000-1
European Solid State Device Research Conference <19, 1989, Berlin>
Fraunhofer HHI ()
bipolar integrated circuits; driver circuits; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; optical communication equipment; integrated laser driver circuit; invertible double-heterojunction bipolar transistors; transconductance; eye pattern diagrams; modulation rates; 200 ms; 1.12 Gbit/s; InGaAsP-InP

An integrated laser driver circuit representing a step towards a monolithic optical transmitter was fabricated on InGaAsP/InP employing invertible double-heterojunction bipolar transistors. Static transconductance of up to 200 mS was attained. Well-behaved eye pattern diagrams have been demonstrated at modulation rates of as high as 1.12 Gbit/s.