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1990
Conference Paper
Titel
Characteristics of 1.5 µm InGaAs/InGaAsP MQW lasers
Abstract
The paper discusses long-wave MQW lasers for emissions in the range of 1.23 to 1.55 µm which have been produced as conventional InAsP/InP double heterostructures and the reasons for their relatively limited performance. The authors describe the technology of an alternative structure in which the InGaAs quantum wells are embedded in a InGaAsP material. Broad-area lasers using the ridge-guide principle are made and tested. The MQW separate confinement lasers have threshold current of 450 and 610 A/cm2 for 4 and 8 wells respectively, notably less than those of the best conventional heterostructures.
Language
English
Tags
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gallium arsenide
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gallium compounds
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iii-v semiconductors
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indium compounds
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semiconductor junction lasers
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broad area lasers
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semiconductors
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long-wave mqw lasers
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ridge-guide principle
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mqw separate confinement lasers
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threshold current
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1.23 to 1.55 micron
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InGaAs-InGaAsp multiquantum well lasers
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inasp-InP double heterostructure