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In situ etching depth monitoring for reactive ion etching of InGaAs(P)/InP heterostructures by ellipsometry

: Muller, R.


Applied Physics Letters 57 (1990), Nr.10, S.1020-1
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer HHI ()
ellipsometry; gallium arsenide; iii-v semiconductors; indium compounds; semiconductor junctions; sputter etching; reactive ion etching; etching depth; rotating analyzer ellipsometer; surface modification; semiconductor; 1300 nm; InGaAsP-InP

In situ ellipsometry at a wavelength of 1300 nm is used to control the etching depth in InGaAs(P)/InP heterostructures. A rotating analyzer ellipsometer, adapted to a parallel-plate reactor for reactive ion etching (RIE), monitors the decreasing layer thickness during the dry etching process. The momentary etching depth is determined with an accuracy of +or-10 nm. Using a methane/hydrogen gas mixture for RIE a characteristic surface modification of the semiconductor material is observed.