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1990
Conference Paper
Titel
Dry chemical etching processes for the production of InP-based components
Abstract
The paper argues the superiority of the chemical dry-etching process over wet processes for the production of components and integrated circuits in In(GaAs)P materials, especially in the nanometer range of dimensions required in quantum-wire and quantum-box structures. It discusses in some detail the dry etching of InP and InGaAs(P) by the ion beam and reactive ion processes, methods of real-time control of the etching periods, material defects, due to the etching process, and some applications of dry etching in component production.
Language
English
Tags
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crystal defects
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gallium arsenide
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gallium compounds
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iii-v semiconductors
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indium compounds
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integrated circuit technology
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sputter etching
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real time control method
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semiconductors
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ion beam process
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chemical dry-etching process
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wet processes
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integrated circuits
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quantum-wire
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quantum-box structures
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reactive ion processes
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etching periods
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material defects
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component production
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inp
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InGaAsP