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Dry chemical etching processes for the production of InP-based components

 
: Niggebrugge, U.; Muller, R.

Schwaderer, B. ; Informationstechnische Gesellschaft -ITG-:
Heterostruktur-Bauelemente : Vorträge der ITG-Fachtagung vom 25. bis 27. April 1990 in Schwäbisch Gmünd
Berlin: VDE-Verlag, 1990 (ITG-Fachbericht 112)
ISBN: 3-8007-1690-9
S.137-144
Informationstechnische Gesellschaft (Fachtagung) <1990, Schwäbisch Gmünd>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
crystal defects; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; integrated circuit technology; sputter etching; real time control method; semiconductors; ion beam process; chemical dry-etching process; wet processes; integrated circuits; quantum-wire; quantum-box structures; reactive ion processes; etching periods; material defects; component production; inp; InGaAsP

Abstract
The paper argues the superiority of the chemical dry-etching process over wet processes for the production of components and integrated circuits in In(GaAs)P materials, especially in the nanometer range of dimensions required in quantum-wire and quantum-box structures. It discusses in some detail the dry etching of InP and InGaAs(P) by the ion beam and reactive ion processes, methods of real-time control of the etching periods, material defects, due to the etching process, and some applications of dry etching in component production.

: http://publica.fraunhofer.de/dokumente/N-13777.html