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1990
Conference Paper
Titel
High-frequency properties and application of invertible GaInAsP/InP double-heterostructure bipolar transistors
Abstract
The authors report on invertible DHBTs fabricated on GaInAsP/InP. Localized Zn diffusion allowed for practically equal active transistor areas in the forward and inverse mode. Transit frequencies up to 6 GHz with collector currents over 100 mA could be demonstrated on these devices. As an application, three transistors were monolithically integrated to form a laser driver circuit showing modulation rates up to 2.6 Gbit/s.
Language
English
Tags
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bipolar integrated circuits
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driver circuits
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gallium arsenide
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gallium compounds
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heterojunction bipolar transistors
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iii-v semiconductors
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indium compounds
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mmic
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solid-state microwave devices
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forward mode
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monolithic integration
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transit frequency
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double-heterostructure bipolar transistors
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active transistor areas
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inverse mode
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collector currents
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laser driver circuit
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6 GHz
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100 ma
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2.6 Gbit/s
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GaInAsP-InP