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1991
Journal Article
Titel
Lasing characteristics of InGaAs/InGaAsP MQW structures grown by low-pressure MOVPE
Abstract
InGaAs/InGaAsP MQW SC lasers for 1.55 mu m emission wavelength with different numbers of quantum wells have been fabricated using low-pressure MOVPE. Photoluminescence and gain spectra and threshold current densities and the temperature behaviour T0 of broad area lasers at varying cavity lengths have been investigated.
Tags
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gallium arsenide
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gallium compounds
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iii-v semiconductors
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indium compounds
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infrared spectra of inorganic solids
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luminescence of inorganic solids
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optical workshop techniques
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photoluminescence
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semiconductor growth
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semiconductor junction lasers
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vapour phase epitaxial growth
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diode lasers
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photoluminescence spectra
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mqw structures
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low-pressure movpe
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quantum wells
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gain spectra
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threshold current densities
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temperature behaviour
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broad area lasers
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cavity lengths
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1.55 micron
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InGaAs-InGaAsp