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LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (lambda g < 1.2 mu m) for optical waveguide applications

: Reier, F.W.; Harde, P.; Kaiser, H.


Journal of Crystal Growth 107 (1991), Nr.1-4, S.867-870
ISSN: 0022-0248
International Conference on Metalorganic Vapor Phase Epitaxy <5, 1990, Aachen>
Workshop on MOMBE, CBE, GSMBE, and Related Techniques <1990, Aachen>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()
gallium arsenide; iii-v semiconductors; indium compounds; optical waveguides; optical workshop techniques; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; lp-movpe growth; optical waveguide applications; low-pressure movpe; standard growth conditions; vertical concentration gradient; heterointerface; predeposition period; InGaAsP-InP

The growth of wide-gap (lambda g<1.2 mu m) InGaAsP/InP layers using low-pressure MOVPE was investigated. A major problem encountered at standard growth conditions was the occurrence of a vertical concentration gradient of arsenic and phosphorus near the heterointerface becoming particularly pronounced at low AsH3 mass flows. The use of a thick (>1 mu m) InP buffer layer, i.e. a sufficiently long In-P predeposition period, was found to represent a convenient solution to this problem.