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1991
Conference Paper
Titel
An integrated laser driver circuit based on implanted collector InGaAs/InAlAs HBTs
Abstract
The fabrication and performance of an InP-based differential-amplifier type integrated laser driver circuit incorporating three implanted-collector heterojunction bipolar transistors and a resistor is described. The integrated circuit exhibits a current modulation capability of 4 Gbit/s and a transconductance of around 30 mS.
Language
English
Tags
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aluminium compounds
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bipolar integrated circuits
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driver circuits
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gallium arsenide
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heterojunction bipolar transistors
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iii-v semiconductors
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indium compounds
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laser accessories
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semiconductor junction lasers
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semiconductor
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integrated laser driver circuit
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implanted collector
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fabrication
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performance
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resistor
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current modulation capability
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transconductance
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InGaAs-InAlAs