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1991
Journal Article
Titel
MBE overgrowth of implanted regions in InP:Fe substrates
Abstract
The MBE growth of InGaAs layers on Si-implanted InP:Fe substrates was investigated. Ion doses and energies used were in the range of 5*1012-5*1014 cm-2 and 100-700 keV, respectively. Among the different annealing conditions tested, i.e. in-situ annealing in the MBE growth chamber at 500 degrees C, rapid thermal annealing at 650 degrees C, and high temperature annealing at 750 degrees C under PH3/H2 partial pressure, only the latter method was found to ensure restoration of the substrate crystal and high-quality overgrowth as assessed by RHEED and X-ray diffractometry. Heterojunction bipolar transistors employing an implanted overgrown collector was successfully fabricated.
Tags
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annealing
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gallium arsenide
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heterojunction bipolar transistors
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iii-v semiconductors
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incoherent light annealing
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indium compounds
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ion implantation
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iron
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molecular beam epitaxial growth
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semiconductor doping
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semiconductor growth
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silicon
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substrates
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ion doses
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ion energies
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MBE overgrowth
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implanted regions
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annealing conditions
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MBE growth chamber
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rapid thermal annealing
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high temperature annealing
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substrate crystal
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high-quality overgrowth
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RHEED
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x-ray diffractometry
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implanted overgrown collector
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500 to 750 degc
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100 to 700 kev
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InGaAs layers
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Ph2-H2
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H2