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Application of localized Zn diffusion across heterointerfaces for the realization of a compact high-speed bipolar driver circuit on InGaAsP/InP



Journal of the Electrochemical Society 138 (1991), Nr.9, S.2812-15
ISSN: 0013-4651
Fraunhofer HHI ()
bipolar integrated circuits; diffusion in solids; driver circuits; gallium arsenide; heterojunction bipolar transistors; iii-v semiconductors; indium compounds; zinc; semiconductor; localized zn diffusion; heterointerfaces; compact high-speed bipolar driver circuit; model; interstitial-substitutional diffusion mechanism; repetitive algorithm; invertible double heterostructure bipolar transistors; simulated results; experimental data; common subcollector layer; current modulation capability; output currents; ac transconductance; 2.6 Gbit/s; 50 ma; 120 ms; InGaAsP:zn-InP

A model is proposed explaining the mechanism of Zn diffusion across heterointerfaces. The model is based on the interstitial-substitutional diffusion mechanism. Employing a repetitive algorithm Zn diffusion across heterointerfaces has been simulated such that the evolution of Zn diffusion in time can be calculated. As an application Zn diffusion across three heterointerfaces involved in the fabrication of invertible double heterostructure bipolar transistors (DHBT) (Zn from the gas phase at 823 K) has been numerically calculated. Good agreement between simulated results and experimental data was achieved. The invertible DHBTs were used to build a compact driver circuit with the three transistors involved being interconnected by a common subcollector layer. A current modulation capability up to 2.6 Gbit/s with output currents of more than 50 mA and an AC transconductance of 120 mS were obtained.