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Nondestructive thickness mapping of epitaxial InGaAsP/InP layers

: Sartorius, B.; Brandstattner, M.


Institute of Electrical and Electronics Engineers -IEEE-:
Second International Conference Indium Phosphide and Related Materials
New York, NY: IEEE, 1990
International Conference Indium Phosphide and Related Materials <2, 1990, Denver/Colo.>
Fraunhofer HHI ()
gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; light absorption; semiconductor epitaxial layers; thickness measurement; buried layers; semiconductor; nondestructive thickness mapping; optical absorption measurements; two-wavelength arrangement; heterostructures; epitaxial InGaAsP-InP layers

A new technique for fast and nondestructive thickness mapping based on optical absorption measurements is presented. An experimental setup in which unspecified losses are eliminated by a two-wavelength arrangement and precision and stability are improved is described. High resolution and speed are obtained. Results for InGaAsP/InP epitaxial layers demonstrate the capability to detect thickness variations in the 10-nm range. Buried layers inside heterostructures can be measured selectively.