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Optimization of extremely highly p-doped In0.53Ga0.47As:Be contact layers grown by MBE

: Passenberg, W.; Harde, P.; Kunzel, H.; Trommer, D.


Institute of Electrical and Electronics Engineers -IEEE-:
Second International Conference Indium Phosphide and Related Materials
New York, NY: IEEE, 1990
International Conference Indium Phosphide and Related Materials <2, 1990, Denver/Colo.>
Fraunhofer HHI ()
beryllium; carrier density; doping profiles; electronic conduction in crystalline semiconductor thin films; gallium arsenide; iii-v semiconductors; indium compounds; junction gate field effect transistors; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; hole concentration; contact layer optimisation; P-doped contact layer; semiconductor; MBE; JFET devices; molecular beam epitaxy; Be diffusion coefficients; growth temperature; specific resistances; doping densities; transit frequencies; 350 to 500 c; 30 GHz; 1 micron; InGaAs:Be-InP:Fe; Ti-Au-contacts

The growth of extremely highly Be-doped (1019-1020 cm-3) InGaAs contact layers for JFET devices by molecular beam epitaxy was optimized with respect to minimizing the Be diffusion. Be diffusion coefficients were found to depend exponentially on Be concentration and strongly on the growth temperature. Hole concentrations and specific resistances of Ti-Au contacts were not influenced by the growth temperature in the investigated range of 350-500 degrees C. Fairly abrupt Be doping profiles in InGaAs were attained at growth temperatures of as low as 350 degrees C even at doping densities in the 1019 cm-3 range. JFETs employing such an optimized layer structure exhibited very high transit frequencies of nearly 30 GHz (1- mu m gate length).