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Properties of two-section traveling wave amplifiers

: Ludwig, R.; Moerhrle, M.; Rosenzweig, M.; Schnabel, R.; Schunk, N.; Weber, H.G.

ECOC 90 Amsterdam. Vol.1: Regular papers : 16th European Conference on Optical Communications, September 16 - 20, 1990, International Congress Centre RAI, Europaplein, Amsterdam, the Netherlands
Amsterdam: IOS Press, 1990
ISBN: 90-5199-037-5
European Conference on Optical Communication (ECOC) <16, 1990, Amsterdam>
Fraunhofer HHI ()
gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; semiconductor junction lasers; ridge waveguide laser; saturation output power; bandwidth; two-section traveling wave amplifiers; semiconductor laser amplifiers; InGaAsP

It is proposed and shown by initial experiments, that multi-section semiconductor laser amplifiers may be better adjusted to specific applications than conventional single-section devices.