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Fundamental characteristics of InGaAs/InGaAsP-MQW-SCH-lasers emitting in 1.3 mu m wavelength range



IEE proceedings. Part J 139 (1992), Nr.1, S.29-32
ISSN: 0267-3932
Fraunhofer HHI ()
gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; laser transitions; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; fundamental characteristics; metalorganic vapour phase epitaxy; wavelength range; multiquantum well separate-confinement lasers; barrier layers; low-pressure movpe; threshold current performance; temperature behaviour; threshold current densities; infinite cavity lengths; barrier thicknesses; 1.3 micron; InGaAs-InGaAsp lasers

Investigations on InGaAs/InGaAsP multiquantum well separate-confinement lasers emitting in the 1.3 mu m wavelength range requiring extremely thin wells of the order of 2 nm are presented. Multiquantum well laser structures with varying numbers of wells and different thicknesses of the barrier layers were grown using low-pressure MOVPE, and were intensively characterised in terms of the threshold current performance and temperature behaviour. Structures comprising 10-15 nm thick barriers and up to 12 wells gave threshold current densities for infinite cavity lengths in the range of 780-1030 A/cm2, being somewhat smaller than those values measured on comparable 1.3 mu m bulk lasers. On the other hand, lasers with both smaller and larger barrier thicknesses as well as higher numbers of wells showed greatly increased threshold current densities which may be attributed to higher internal losses and inhomogeneous carrier injection, respectively.