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Low-temperature MBE-grown In0.52Ga0.18Al0.30As/InP optical waveguides



Electronics Letters 28 (1992), Nr.9, S.844-6
ISSN: 0013-5194
Fraunhofer HHI ()
aluminium compounds; gallium compounds; iii-v semiconductors; indium compounds; integrated optics; molecular beam epitaxial growth; optical waveguides; refractive index; semiconductor epitaxial layers; rib waveguides; mbe growth; temperature range; propagation losses; resistivity; 1.06 micron; 1.55 micron; 400 to 450 c; 1e4 ohmcm; in0.52ga0.18al0.30as-InP; InP substrate

The MBE growth of In0.52Ga0.18Al0.30As ( lambda g=1.06 mu m) layers in the temperature range of 400-450 degrees C was demonstrated to give high-quality optical waveguides which not only exhibit low propagation losses as low as 0.5 dB/cm at lambda =1.55 mu m but concomitantly high resistivity of >104 Omega cm. The refractive index of In0.52Ga0.18Al0.30As was estimated to be 3.207+or-0.03 at lambda =1.55 mu m.