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Recent advances in dry etching processes for InP-based materials

 
: Niggebrugge, U.

:

Riley, T.:
Third International Conference Indium Phosphide and Related Materials : April 8 - 11, 1991, Park Hotel, Cardiff, Wales, UK
New York, NY: IEEE, 1991
ISBN: 0-87942-626-8
ISBN: 0-87942-627-6
ISBN: 0-87942-628-4
S.246-251
International Conference Indium Phosphide and Related Materials <3, 1991, Cardiff>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
iii-v semiconductors; indium compounds; semiconductor technology; sputter etching; semiconductors; dry etching processes; InP-based materials; process induced damage; in situ etch depth control; inp; InGaAsP

Abstract
The advances towards high-quality dry etching techniques for InP-based materials are reviewed, including recent results on process induced damage. Methods of in situ etch depth control are discussed, and examples of devices advantageously fabricated by dry etching techniques are presented.

: http://publica.fraunhofer.de/dokumente/N-13674.html