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1991
Conference Paper
Titel
A reliable fabrication technique for very low resistance ohmic contacts to p-InGaAs using low energy Ar+ ion beam sputtering
Abstract
A fabrication technique for non-alloyed Au/Pt/Ti ohmic contacts to p-InGaAs (NA=1*1020 cm-3) is discussed. The semiconductor surface is cleaned by Ar+ ions immediately followed by the metal deposition by electron beam evaporation. The low energy (60 eV) Ar+ ion etching removes the residual oxide layer existent on the semiconductor surface. The contact is formed by rapid thermal processing (RTP) at 400+or-C. It is shown that extremely low specific contact resistances (rc =6*10-8 Omega -cm2) can be achieved, even for 2.5 mu m contact widths, and that the contacts produced exhibit excellent homogeneity and improved uniformity over wet chemically pre-cleaned ones.
Tags
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contact resistance
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electron beam deposition
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gallium arsenide
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gold
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heat treatment
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iii-v semiconductors
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indium compounds
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ohmic contacts
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platinum
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sputter etching
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titanium
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p-type semiconductors
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nonalloyed contacts
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fabrication technique
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low resistance ohmic contacts
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low energy ar+ ion beam sputtering
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semiconductor surface
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metal deposition
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electron beam evaporation
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rapid thermal processing
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rtp
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contact resistances
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60 ev
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400 degc
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2.5 micron
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ar+ ion etching
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InGaAs
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au-pt-ti-InGaAs