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A reliable fabrication technique for very low resistance ohmic contacts to p-InGaAs using low energy Ar+ ion beam sputtering

: Stareev, G.; Umbach, A.; Fidorra, F.; Roehle, H.


Riley, T.:
Third International Conference Indium Phosphide and Related Materials : April 8 - 11, 1991, Park Hotel, Cardiff, Wales, UK
New York, NY: IEEE, 1991
ISBN: 0-87942-626-8
ISBN: 0-87942-627-6
ISBN: 0-87942-628-4
International Conference Indium Phosphide and Related Materials <3, 1991, Cardiff>
Fraunhofer HHI ()
contact resistance; electron beam deposition; gallium arsenide; gold; heat treatment; iii-v semiconductors; indium compounds; ohmic contacts; platinum; sputter etching; titanium; p-type semiconductors; nonalloyed contacts; fabrication technique; low resistance ohmic contacts; low energy ar+ ion beam sputtering; semiconductor surface; metal deposition; electron beam evaporation; rapid thermal processing; rtp; contact resistances; 60 ev; 400 degc; 2.5 micron; ar+ ion etching; InGaAs; au-pt-ti-InGaAs

A fabrication technique for non-alloyed Au/Pt/Ti ohmic contacts to p-InGaAs (NA=1*1020 cm-3) is discussed. The semiconductor surface is cleaned by Ar+ ions immediately followed by the metal deposition by electron beam evaporation. The low energy (60 eV) Ar+ ion etching removes the residual oxide layer existent on the semiconductor surface. The contact is formed by rapid thermal processing (RTP) at 400+or-C. It is shown that extremely low specific contact resistances (rc =6*10-8 Omega -cm2) can be achieved, even for 2.5 mu m contact widths, and that the contacts produced exhibit excellent homogeneity and improved uniformity over wet chemically pre-cleaned ones.