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RF and noise characterization of a monolithically integrated receiver on InP



Riley, T.:
Third International Conference Indium Phosphide and Related Materials : April 8 - 11, 1991, Park Hotel, Cardiff, Wales, UK
New York, NY: IEEE, 1991
ISBN: 0-87942-626-8
ISBN: 0-87942-627-6
ISBN: 0-87942-628-4
International Conference Indium Phosphide and Related Materials <3, 1991, Cardiff>
Fraunhofer HHI ()
electron device noise; iii-v semiconductors; indium compounds; integrated optoelectronics; junction gate field effect transistors; optical communication equipment; photodiodes; receivers; semiconductor device models; semiconductors; bias dependence; rf characterization; optical receivers; signal measurement; noise measurement; noise characterization; monolithically integrated receiver; optoelectronic integrated circuit; oeic; optical waveguide; gain-bandwidth product; bias operation; receiver input noise; jfet channel noise; equivalent circuit model; optical sensitivity; bit rate; 576 mbit/s; InP substrates

A comprehensive characterization of an optoelectronic integrated circuit (OEIC) receiver that uses an optical waveguide is given. Bias dependent signal and noise measurements show that the gain-bandwidth product increases from 1.4 GHz at zero bias operation to 2.7 GHz at the optimum bias voltages. The receiver input noise is dominated by the JFET channel noise. Using an equivalent circuit model for the receiver, agreement between the calculated and the measured data was found. From the measured input noise, an optical sensitivity of -29 dBm was evaluated at a bit rate of 576 Mb/s (BER=10-9).