Options
1991
Conference Paper
Titel
MBE growth and electrical behavior of single and double Si delta-doped InGaAs-layers
Abstract
The molecular beam epitaxial growth of Si delta -doped donor planes within InGaAs layers is described. The results of Hall and C-V characterization measurements of single and double delta -doped InGaAs channel layers are presented. It is shown that high sheet carrier concentrations approaching 3.8*1013 cm-2 can be achieved. Improved carrier transport in double delta -doped channels for FET applications is proposed and experimentally confirmed by decreased sheet resistance values obtained from double delta -doped structures.
Tags
-
gallium arsenide
-
hall effect
-
high electron mobility transistors
-
iii-v semiconductors
-
indium compounds
-
molecular beam epitaxial growth
-
semiconductor doping
-
semiconductor growth
-
silicon
-
semiconductors
-
single delta -doped channels
-
HEMT
-
MBE growth
-
electrical behavior
-
c-v characterization
-
delta-doped InGaAs channel layers
-
sheet carrier concentrations
-
carrier transport
-
double delta -doped channels
-
sheet resistance