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Laser properties of 1.35 mu m InGaAs/InGaAsP-separate-confinement-multi-quantum-well-structures



Riley, T.:
Third International Conference Indium Phosphide and Related Materials : April 8 - 11, 1991, Park Hotel, Cardiff, Wales, UK
New York, NY: IEEE, 1991
ISBN: 0-87942-626-8
ISBN: 0-87942-627-6
ISBN: 0-87942-628-4
International Conference Indium Phosphide and Related Materials <3, 1991, Cardiff>
Fraunhofer HHI ()
gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; semiconductor junction lasers; laser properties; ridge-waveguide lasers; separate-confinement-multi-quantum-well-structures; threshold current densities; characteristic temperature; laser structures; 1.35 micron; 60 k; InP substrates; InGaAs-InGaAsp-InP structures

Measurements of the threshold current densities of 1.35 mu m InGaAs/InGaAsP MQW separate-confinement laser structures are presented. It is shown that the lowest values for the threshold current density can be obtained with barrier thicknesses between 10 and 15 nm. The extrapolated threshold current densities of the investigated structures varied between 780 and 1120 A-cm-2. depending on the number of wells. The characteristic temperature T0 of the laser structures was about 60 K.