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Electro-optic modulation by electron transfer in multiple InGaAsP/InP barrier, reservoir, and quantum well structures

: Agrawal, N.; Hoffmann, D.; Franke, D.; Li, K.C.


Applied Physics Letters 61 (1992), Nr.3, S.249-251
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer HHI ()
electro-optical devices; gallium arsenide; iii-v semiconductors; indium compounds; integrated optics; optical modulation; semiconductor quantum wells; vapour phase epitaxial growth; electrooptic modulation; braqwet; multiple quantum well; absorptive modulation; barrier; reservoir; optical modulator heterostructure; voltage controlled electron transfer; refractive modulation; high speed; power dissipation; monolithic integration; metalorganic vapor phase epitaxy; InGaAsP-InP

Recently, a novel optical modulator heterostructure has been introduced based on voltage controlled electron transfer from a reservoir to a closely spaced quantum well. It has proven to exhibit large absorptive and refractive modulation at high speed and low power dissipation. In order to achieve monolithic integration with the existing high quality InGaAsP/InP lasers for high bit-rate systems, it is crucial to implement such devices within the same material system. In this letter, the authors demonstrate for the first time, InGaAsP/InP electron-transfer modulators grown using metalorganic vapor phase epitaxy.