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Gigahertz self-pulsation in 1.5 mu m wavelength multisection DFB lasers

: Möhrle, M.; Feister, U.; Hörer, J.; Molt, R.; Sartorius, B.


IEEE Photonics Technology Letters 4 (1992), Nr.9, S.976-978
ISSN: 1041-1135
Fraunhofer HHI ()
distributed feedback lasers; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; semiconductor lasers; ir; semiconductor laser diodes; self-pulsation; wavelength multisection dfb lasers; distributed feedback; injection conditions; 1.5 micron; InGaAsP-InP

Self-pulsation in InGaAsP/InP multisection distributed feedback (DFB) lasers was generated reproducibly by adjusting appropriate injection conditions. Frequencies of up to some gigahertz were achieved. It was demonstrated that-in contrast to Fabry-Perot (FP) elements-no selective treatment of one section is required for creating the self-pulsation. It is concluded that the self-pulsation in DFB elements is of a different type than in FP elements.