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Electro-optic modulation by electron transfer in MOVPE grown InGaAsP/InP multiple quantum well structures

: Agrawal, N.; Hoffmann, D.; Franke, D.; Li, K.C.; Clemens, U.; Witt, A.; Wegener, M.

	IOOC-ECOC '91. 17th European Conference on Optical Communication ECOC '91. 8th International Conference on Integrated Optics and Optical Fibre Communication IOOC '91. Vol.3 : Paris, France, 9-12 Sept 1991 Valbonne: SEE, 1991 S.52-55
	European Conference on Optical Communication (ECOC) <17, 1991, Paris> International Conference on Integrated Optics and Optical Fibre Communication (IOOC) <8, 1991, Paris>

	Englisch
	Konferenzbeitrag
	Fraunhofer HHI ()
	electro-optical devices; gallium arsenide; gallium compound; iii-v semiconductor; indium compounds; integrated optic; optical modulation; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; mqw semiconductor; sq well; optical switch; electron transfer; movpe grown; multiple quantum well structure; electro-optic modulation; voltage controlled phase space filling; modulation doped; InGaAsP-InP

Abstract
The authors demonstrate for the first time electro-optic modulation due to voltage controlled phase space filling by electron transfer in modulation doped MOVPE grown InGaAsP/InP multiple quantum well structures.

: http://publica.fraunhofer.de/dokumente/N-13622.html