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Low-temperature MBE of AlGaInAs lattice-matched to InP

 
: Künzel, H.; Böttcher, J.; Gibis, R.; Hoenow, H.; Heedt, C.

:

Journal of Crystal Growth 127 (1993), Nr.1-4, S.519-522
ISSN: 0022-0248
International Conference on Molecular Beam Epitaxy <7, 1992, Schwäbisch Gmünd>
Englisch
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()
aluminium compounds; deep levels; electronic conduction in crystalline semiconductor thin films; gallium arsenide; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor growth; low temperature mbe; semiconductor; excess As; growth temperature; Al content; material resistivity; deep traps; AlGaInAs-InP

Abstract
Low-temperature growth of AlGaInAs on InP is limited by the incorporation of excess arsenic. Reduction of growth temperature and increase of the Al content result in an enhancement of the material resistivity. The specific resistivity is correlated with incorporation of deep traps.

: http://publica.fraunhofer.de/dokumente/N-13608.html