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1992
Conference Paper
Titel
High resistivity, low loss InGaAlAs/InP optical waveguides grown by low-temperature MBE
Abstract
The authors present a study of material properties relevant to optical waveguides of MBE (molecular-beam epitaxy) grown InGaAlAs ( gamma g=1.06 mu m) layers lattice-matched to InP. In particular, the impact of the substrate temperature was investigated. MBE growth of In0.52Ga0.18Al0.30As ( gamma g=1.06 mu m) layers in the temperature range of 400-450 degrees C was demonstrated to give high-quality optical waveguides which not only exhibit low propagation losses of well below 2 dB/cm at gamma =1.55 mu m but also high resistivity of >104 Omega -cm. The refractive index of In0.52Ga0.18Al0.30As was estimated to be 3.207+or-0.03 at gamma =1.55 mu m.
Language
English
Tags
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aluminium compounds
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electronic conduction in crystalline semiconductor thin films
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gallium arsenide
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indium compounds
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integrated optics
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molecular beam epitaxial growth
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optical losses
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optical waveguides
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refractive index
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semiconductor epitaxial layers
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semiconductor growth
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high resistivity
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low loss ingaalas/InP optical waveguides
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low-temperature mbe
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material properties
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molecular-beam epitaxy
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substrate temperature
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high-quality
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low propagation losses
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1.06 micron
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1.55 micron
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400 to 450 degc
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104 ohmcm
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inp
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in0.52ga0.18al0.30as
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ingaalas-InP