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Monolithic integrated wavelength duplexer-receiver on InP

 

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Journal of Lightwave Technology 11 (1993), Nr.3, S.408-15
ISSN: 0733-8724
Englisch
Zeitschriftenaufsatz
Fraunhofer HHI ()
field effect integrated circuits; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; integrated optoelectronics; optical receivers; photodiodes; semiconductor; wavelength duplexer-receiver; monolithic integration; detector stage; photodiode; field-effect transistor; load resistor; bidirectional transmission link; bit error rate; sensitivity; receiver; gain-bandwidth product; 1.3 micron; 1.55 micron; 576 mbit/s; gainAsP-InP

Abstract
The monolithic integration of a detector stage comprising a photodiode and a field-effect transistor with a load resistor and a wavelength duplexer, realized in the GaInAsP/InP material system, is described. Design considerations, in particular for the wavelength duplexer, but for the complete chip as well, are reported, and details related to the realization of the device are given. Chips were mounted into housings and operated in a 1.3- mu m/1.55- mu m bidirectional transmission link. At 576 Mb/s and 10-9 bit error rate, the sensitivity of the module is -21 dBm, the intrinsic sensitivity of the receiver is -28 dBm, and the gain-bandwidth product for the lowest noise bias conditions is 3.8 GHz.

: http://publica.fraunhofer.de/dokumente/N-13597.html