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Electroabsorption and saturation behavior of InGaAsP/InP/InAlAs multiple superlattice electron transfer optical modulator structures



Applied Physics Letters 63 (1993), Nr.8, S.1110-12
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer HHI ()
aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; iii-v semiconductors; indium compounds; optical modulation; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; saturation; InGaAsP/inp/inalas multiple superlattice; electron transfer optical modulator structures; multi-quantum-well; metalorganic vapor phase epitaxy; modulation doping; thermionic emission barrier; leakage current; absorption quenching; differential transmission spectroscopy; type ii inp/inalas interface; InGaAsP-InP-inalas

We report substantial progress in the growth of multi-quantum-well electron transfer optical modulator structures by metalorganic vapor phase epitaxy, which is made possible as a consequence of the highly abrupt modulation doping of donors and acceptors in InP-reservoir and InAlAs-barrier layers, respectively. Due to a large thermionic emission barrier provided by the type II InP/InAlAs interface, the InGaAsP/InP/InAlAs devices exhibit extremely low leakage current densities. We observe distinct and sharp features related to absorption quenching in differential transmission spectroscopy. Moreover, the saturation intensities of electron transfer modulators are determined. The underlying physical mechanism is discussed.