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MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures

: Kunzel, H.; Bottcher, J.; Hase, A.; Shramm, C.


Materials Science and Engineering, B. Solid state materials for advanced technology 21 (1993), Nr.2-3, S.194-197
ISSN: 0921-5107
Symposium Materials for Optoelectronic Devices, OEICs and Photonics <1993, Strasbourg>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()
aluminium compounds; gallium arsenide; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; semiconductor quantum wells; semiconductor; optical quality; MBE growth; Al(Ga)InAs/GaInAs MQW structures; laser device applications; lateral uniformity; crystalline quality; low interface charge densities; buffer configuration; barrier composition; well emission properties; Al(Ga)InAs-GaInAs

Molecular beam epitaxy-grown Al(Ga)InAs/GaInAs single quantum well and multiple quantum well structures, comprising ternary and quaternary barriers, were investigated for laser device applications. Barrier materials of excellent lateral uniformity and high optical and crystalline quality, as well as low interface charge densities of the Al(Ga)InAs/GaInAs heterojunctions, were achieved. The influence of buffer configuration and barrier composition on the well emission properties was studied.