
Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures
Abstract
Molecular beam epitaxy-grown Al(Ga)InAs/GaInAs single quantum well and multiple quantum well structures, comprising ternary and quaternary barriers, were investigated for laser device applications. Barrier materials of excellent lateral uniformity and high optical and crystalline quality, as well as low interface charge densities of the Al(Ga)InAs/GaInAs heterojunctions, were achieved. The influence of buffer configuration and barrier composition on the well emission properties was studied.