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Development of advanced GaInAs/AlInAs delta-doped SQW-HEMT structures

: Kunzel, H.; Bach, H.-G.; Bottcher, J.; Hase, A.


IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
Sixth International Conference on Indium Phosphide and Related Materials 1994. Proceedings : March 27 - 31, 1994, Fess Parkers' Red Lion Resort, Santa Barbara, California, USA
Piscataway, NJ: IEEE, 1994
ISBN: 0-7803-1476-X
ISBN: 0-7803-1477-8
ISBN: 0-7803-1478-6
International Conference on Indium Phosphide and Related Materials (IPRM) <6, 1994, Santa Barbara/Calif.>
Fraunhofer HHI ()
aluminium compounds; gallium arsenide; high electron mobility transistors; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; semiconductor quantum wells; GaInAs/AlInAs delta -doped sqw-HEMT structures; mbe; layer sequence; doping concentration; doping distribution; channel thickness; spacer thickness; buffer configuration; growth temperature profile; electrical characteristics; self-consistent calculations; GaInAs-AlInAs

Advanced MBE-grown GaInAs/AlInAs SQW-HEMT layer structures were realized by carefully optimizing the growth conditions and the layer sequence. The influence of doping concentration and distribution, spacer and channel thicknesses, buffer configuration, and growth temperature profile on the electrical characteristics has been systematically studied and compared with results of self-consistent calculations.