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1994
Journal Article
Titel
Trailing edge phenomena in SrS:CeCl3 thin film electroluminescent devices
Abstract
SrS:CeCl3 based thin film electroluminescent devices in conventional and multilayer structures have been investigated by means of time and voltage dependent photoluminescence (PL) measurements after laser excitation of the Ce3+ ions. It turned out that a significant photo-induced transferred charge as well as photo-induced electroluminescence (PEL) occurs at voltage levels far below the actual EL threshold, mainly in the trailing edge of the voltage pulse. Furthermore, a reduction of the PL intensity by increasing the applied voltage is observed. At EL threshold voltage, the PL intensity is as low as 65-75% of the zero voltage value. These observations are independent of the device structure. The PEL can be described as a partial regain of the quenched PL, being more pronounced in the multilayer case due to a higher mean electric field strength in the SrS:CeCl3 layers. To explain the experimental findings, a quenching caused by weakly accelerated electrons is proposed.
Tags
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cerium compounds
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charge transfer states
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electroluminescent displays
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luminescence of inorganic solids
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luminescent devices
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optical films
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photoluminescence
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radiation quenching
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spectral line intensity
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strontium compounds
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thin film devices
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time dependence
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thin film electroluminescent devices
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multilayer structures
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voltage dependent photoluminescence
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laser excitation
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ce3+ ions
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photo-induced transferred charge
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photo-induced electroluminescence
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pel
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voltage levels
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el threshold
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trailing edge
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voltage pulse
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pl intensity
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applied voltage
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quenched pl
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mean electric field strength
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weakly accelerated electrons