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Ultrafast graded-gap electron transfer optical modulator structure

 
: Agrawal, N.; Wegener, M.

:

Applied Physics Letters 65 (1994), Nr.6, S.685-7
ISSN: 0003-6951
ISSN: 1077-3118
Englisch
Zeitschriftenaufsatz
Fraunhofer HHI ()
aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; iii-v semiconductors; indium compounds; optical modulation; optical waveguides; ultrafast graded-gap electron transfer optical modulator structure; electron escape times; high-speed applications; electrical behavior; 1 ps; ingaalas-InP

Abstract
We demonstrate an ultrafast graded-gap electron transfer optical modulator structure with electron escape times on the order of 1 ps. All other aspects important for high-speed applications, for example, electroabsorption and electrical behavior remain essentially unaffected.

: http://publica.fraunhofer.de/dokumente/N-13514.html