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In situ native oxide removal from AlGaInAs surfaces by hydrogen radical treatment for molecular beam epitaxy regrowth

: Hase, A.; Gibis, A.R.; Kunzel, H.; Griebenow, U.


Applied Physics Letters 65 (1994), Nr.11, S.1406-8
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer HHI ()
aluminium compounds; gallium arsenide; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor growth; surface topography; surface treatment; h radical treatment; molecular beam epitaxy regrowth; al0.24ga0.24in0.52as; oxide removal; high energy electron diffraction; residual contamination levels; surface smoothness

Removal of native oxide from Al0.24Ga0.24In0.52As layers grown lattice-matched onto InP substrates is successfully achieved by an in situ hydrogen radical treatment prior to molecular beam epitaxy (MBE) overgrowth. Cleaning conditions using moderate substrate temperatures not necessitating a surface stabilizing arsenic flux were elaborated, which ensured complete oxide removal without deterioration of the underlying AlGaInAs material. The surface quality as assessed by high energy electron diffraction, and the quality of epitaxial layers deposited onto this surface were found to be at least equivalent to that achieved with epitaxial growth directly on InP substrates, indicating the achievement of thorough oxide removal, low residual contamination levels, and a surface smoothness adequate for MBE regrowth.