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Quantitative analysis of Be diffusion in delta-doped AlInAs and GaInAs during MBE growth

: Passenberg, W.; Harde, P.

Rupprecht, H.S.; Weimann, G.:
Gallium arsenide and related compounds 1993. Proceedings
Bristol: IOP Publishing, 1994 (Institute of Physics - Conference Series 136)
ISBN: 0-7503-0295-X
International Symposium on Gallium Arsenide and Related Compounds <20, 1993, Freiburg/Brsg.>
Fraunhofer HHI ()
aluminium compounds; beryllium; diffusion; gallium arsenide; iii-v semiconductors; impurity distribution; impurity states; indium compounds; molecular beam epitaxial growth; semiconductor growth; AlInAs:Be; GaInAs:Be; MBE growth; acceptor diffusion; dopant concentration; temperature dependence; arrhenius plot; 400 to 530 c

Diffusion of Be acceptors in MBE grown multiple delta-doped AlInAs and GaInAs layers was investigated. Over the investigated concentration range the diffusion coefficient in AlInAs appears to be higher than in GaInAs. In agreement with theory a quadratic relationship with dopant concentration was verified. The temperature dependence in the investigated range from 400 to 530 degrees C can be described by an Arrhenius plot with activation energies of 0.6 eV and 1.1 eV for AlInAs and GaInAs, respectively. The diffusion behaviour appears to be unaffected by the V/III beam equivalent pressure ratio.