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In situ SIMS monitoring for ion beam etching of III-V semiconductor compounds and metal contacts

 

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IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
Fifth International Conference on Indium Phosphide and Related Materials. Proceedings : April 19-22, 1993, Maison de la Chimie, Paris, France
Piscataway, NY: IEEE, 1993
ISBN: 0-7803-0993-6
ISBN: 0-7803-0994-4
ISBN: 0-7803-0995-2
S.683-686
International Conference on Indium Phosphide and Related Materials (IPRM) <5, 1993, Paris>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
iii-v semiconductors; secondary ion mass spectra; semiconductor-metal boundaries; sputter etching; sims; ion beam etching; iii-v semiconductor compounds; metal contacts; secondary ion mass spectroscopy in situ monitoring system; sensitivity; dry etching; etch gases; metal contact dry etching; 2.5 nm; n2; ar; InP-inGaAsp; GaAs-alas

Abstract
Experimental results with a secondary ion mass spectroscopy in situ monitoring system for ion beam etching are described. The authors demonstrate that the sensitivity of this method is high enough to monitor the dry etching of any type of semiconductor material in the InP/InGaAsP and GaAs/AlAs basis with both the commonly used etch gases, N2 and Ar. The technique enables the precise control of metal contact dry etching. Layers of a thickness as low as 2.5 nm for a minimum etched surface of only 15 mm2 were resolved.

: http://publica.fraunhofer.de/dokumente/N-13486.html