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Semitransparent mask technique for relief type surface topographies

: Wengelink, J.; Engel, H.; Döldissen, W.


Microelectronic engineering 27 (1995), Nr.1-4, S.247-250
ISSN: 0167-9317
International Conference on Micro- and Nanofabrication (Micro- and Nanoengineering) <1994, Davos>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()
electron beam lithography; masks; photolithography; surface topography; relief type surface topographies; semitransparent mask photolithography; photomask fabrication; lens-like structures; tapered structures

Semitransparent mask photolithography can be used for the generation of relief type surfaces with only a single photolithographic exposure. An electron beam lithography process for the fabrication of the photomasks employed in this technique is presented. The influence of electron beam exposure dose, beam size and deflection field size are discussed. Examples of tapered and lens-like relief structures fabricated by semitransparent mask lithography are given.