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Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures

: Kunzel, H.; Bottcher, J.; Hase, A.; Strahle, S.; Kohn, E.


Journal of Crystal Growth 150 (1995), Nr.1-4, S.1241-1245
ISSN: 0022-0248
International Conference on Molecular Beam Epitaxy <8, 1994, Osaka>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()
aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; growth temperature profile; single quantum well; high electron mobility transistor; molecular beam epitaxy; carrier concentrations; mobilities; saturation current; AlInAs-GaInAs

In molecular beam epitaxy (MBE) grown AlInAs/GaInAs single quantum well high electron mobility transistor structures, the use of low growth temperature for layers below the channel to suppress Si movement is mandatory. An optimized growth temperature profile has been elaborated as a prerequisite to reach high carrier concentrations in combination with high mobilities. The impact of an optimum growth temperature profile on device performance is demonstrated in devices with a saturation current of up to 1000 mA/mm.