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On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InP



Journal of Electronic Materials 24 (1995), Nr.11, S.1535-1537
ISSN: 0361-5235
ISSN: 1543-186X
Workshop on Organometallic Vapor Phase Epitaxy <7, 1995, Fort Meyers/Fla.>
Fraunhofer HHI ()
doping profiles; iii-v semiconductors; indium compounds; interstitials; iron; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; fe doping profiles; movpe; sims; InP substrates; dopant diffusion; substrate preparation; deionized water rinsing; etching; semiconductor; inp; inp:fe

Fe doping profiles in InP layers grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) were investigated by secondary ion mass spectroscopy. Different pre-treatments of the InP substrates proved to have substantially different effects on the Fe profiles which strongly indicate the relevance of underlying interfaces to dopant diffusion in subsequent layers, at least in the case of dopants occupying the group-III sublattice. We attribute the degradation of Fe profiles observed for some kinds of treatment to the emission of In interstitials from surfaces covered by oxides or other residues which are incompletely removed during the MOVPE preheat cycle. A favorable substrate preparation method for avoiding Fe profile degradation relies on etching by 5:1:1 H2SO4:H2O2:H2O at room temperature followed by 30 min deionized water rinsing.