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GaSb-based semiconductor disk lasers for the 2-3 µm wavelength range. Versatile lasers for high-power and narrow linewidth emission

: Rattunde, M.; Rösener, B.; Kaspar, S.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.

Optical Society of America -OSA-, Washington/D.C.:
Conference on Lasers and Electro-Optics and the Quantum Electronics and Laser Science Conference, CLEO/QELS 2010. CD-ROM : Laser Science to Photonic Applications, May 16-21, 2010, San Jose, California
Washington, DC: OSA, 2010
ISBN: 978-1-55752-889-6
ISBN: 978-1-55752-890-2
Paper CWE3
Conference on Lasers and Electro-Optics Europe (CLEO) <2010, San Jose/Calif.>
Quantum Electronics and Laser Science Conference (QELS) <2010, San Jose/Calif.>
Fraunhofer IAF ()

Highly efficient GaSb-based semiconductor-disk-lasers in the 1.9-2.8µm range have been fabricated. they reach output powers > 3W in CW-operation at room temperature. By using intracavity filters, single-frequency emission with a linewidth below 2.3 MHz was achieved.