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Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures

 

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IPRM '96. Eigth International Conference on Indium Phosphide and Related Materials. Proceedings
1996
S.404-407
International Conference on Indium Phosphide and Related Materials (IPRM) <8, 1996, Schäbisch Gmünd>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
gallium arsenide; iii-v semiconductors; indium compounds; optical waveguides; quantum confined stark effect; semiconductor growth; semiconductor quantum wells; substrates; thermal stability; vapour phase epitaxial growth; movpe growth conditions; substrate parameters; structural quality; multi-period InGaAsP/InP mqw structures; gas exchange procedure; carry-over effects; mqw structures; buffer layer; InGaAsP-InP

Abstract
In this work we have investigated the MOVPE growth of multi-period InGaAsP/InP quantum confined Stark effect (QCSE) layer structures and provide evidence that the QCSE response can be influenced by optimizing the gas exchange procedure, mainly to minimize carry-over effects. Secondly, we present new results on the thermal stability behaviour of these MQW structures which appear to be strongly related with the underlying buffer layer and substrate material.

: http://publica.fraunhofer.de/dokumente/N-13318.html