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MOMBE selective infill growth of InP:Si and InGaAs:Si and large area MOMBE regrowth



Journal of Crystal Growth 164 (1996), Nr.1-4, S.339-344
ISSN: 0022-0248
International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE) <5, 1995, La Jolla/Calif.>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()
chemical beam epitaxial growth; gallium arsenide; iii-v semiconductors; indium compounds; interface structure; scanning electron microscopy; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; surface topography; selective infill growth; MOMBE; large area regrowth; temperature dependence; v iii ratio effects; surface morphology; growth optimization; growth boundaries; orientation dependent diffusion; facet formation; InP:Si; InGaAs:Si

MOMBE selective infill growth (SIG) of silicon-doped InP and InGaAs was investigated by variation of the principal growth parameters, i.e. temperature, V/III-ratio and rate. Excellent surface morphology in conjunction with perfect selectivity and defect-free vertical interfaces between the grown layer and the etched substrate sidewall was achieved by an appropriate optimization of the selective growth conditions for InP as well as, for the first time, InGaAs. In the case of SIG of InP, smooth growth boundaries were obtained in the [011] direction, whereas in the [011] direction minor growth perturbations occur, which are related to a strong orientation dependent diffusion behavior of the growth species on the growth front. In the case of SIG of InGaAs, slight perturbations accompanied by facet formation at the edges of the selectively grown windows were observed. In the perspective of device application, homogeneous large area MOMBE InGaAs regrowth of the embedded structures was successfully achieved.