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1996
Journal Article
Titel
Monolithic pin-HEMT 1.55 mu m photoreceiver on InP with 27 GHz bandwidth
Abstract
A monolithically integrated photoreceiver is presented. Based on a new integration concept comprising a waveguide integrated photodiode and a travelling wave GaInAs/AlInAs-HEMT amplifier. A record 3 dB bandwidth of 27 GHz is measured and a clearly open eye is obtained for a 20 Gbit/s pseudo-random bit stream. This high speed performance was achieved with photolithographically defined 0.7 mu m gate length HEMTs, regrown by MBE on semi-insulating GaInAsP waveguide layers.
Tags
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aluminium compounds
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gallium compounds
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HEMT integrated circuits
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iii-v semiconductors
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indium compounds
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integrated optoelectronics
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molecular beam epitaxial growth
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optical receivers
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p-i-n photodiodes
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photolithography
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semiconductor epitaxial layers
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semiconductor growth
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travelling wave amplifiers
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pin-HEMT photoreceiver
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monolithically integrated photoreceiver
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waveguide integrated photodiode
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travelling wave HEMT amplifier
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clearly open eye
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pseudo-random bit stream
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high speed performance
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photolithographically defined devices
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mbe
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1.55 micrometre
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27 GHz
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20 Gbit/s
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0.7 micron
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AlInAs-GaInAs
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inp