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1996
Conference Paper
Titel
27 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifier
Abstract
Optical front-ends are considered to play a major role in future communication systems operating at bit rates of 20 or even 40 Gbit/s, as well as in mobile communication systems with fibre-optic distribution networks. Consequently, different approaches for the monolithic integration of high-speed receivers for a wavelength of 1.55 mu m can be found in the literature. In this paper, we report on the first monolithical integration of an optical receiver OEIC, which combines the advantageous high-speed characteristics of the waveguide integrated pin photodiode and of the travelling wave amplifier (TWA) circuit, both based on the InP material system.
Konferenz
Tags
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aluminium compounds
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gallium arsenide
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HEMT integrated circuits
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high-speed optical techniques
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iii-v semiconductors
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indium compounds
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integrated optoelectronics
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optical receivers
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optical waveguide components
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p-i-n photodiodes
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travelling wave amplifiers
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photoreceiver
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waveguide fed pin photodiode
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HEMT travelling wave amplifier
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optical front-end
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monolithic integration
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high-speed optical receiver
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oeic
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1.55 micron
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27 GHz
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GaInAs-AlInAs