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1995
Conference Paper
Titel
Submicron InGaAs/InP MSM photodetectors for operation at 1.55 mu m
Abstract
The implementation of future high-speed optical communication networks operating in the 20-40 Gbit/s regime relies on the availability of correspondingly fast photodetectors for the 1.3-1.55 mu m wavelength range. Interdigitated InGaAs metal-semiconductor-metal (MSM) detectors in the InP material system are promising candidates for wideband photoreceivers due to their inherent lower specific capacitance as compared to p-i-n diodes. MSM photodetectors with submicron (0.3 mu m) feature size fabricated by electron beam lithography on 300 nm InGaAs absorption layer exhibit low dark current (<10 nA), a high external quantum yield (23%) and a frequency response up to 40 GHz at 1.55 mu m.
Language
English
Tags
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electron beam lithography
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gallium arsenide
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iii-v semiconductors
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indium compounds
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metal-semiconductor-metal structures
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optical communication equipment
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optical receivers
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photodetectors
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submicron msm photodetectors
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high speed optical communication networks
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metal-semiconductor-metal detectors
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wideband photoreceivers
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specific capacitance
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submicron feature size
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absorption layer
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low dark current
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high external quantum yield
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frequency response
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0.3 micron
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10 na
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40 GHz
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20 to 40 Gbit/s
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1.3 to 1.55 micron
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InGaAs-InP