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Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture

 

22nd European Conference on Optical Communication 1996. Vol.1: Regular and invited papers : September 15 - 19, 1996, Oslo, Norway, 'Folkets Hus' Congress Centre, proceedings, co-located with: 2. European Exhibition on Optical Communication - EEOC '96
Kjeller: Telenor R&D, 1996
ISBN: 82-42-30418-1
ISBN: 0-7803-3603-8
S.133-136
European Conference on Optical Communication (ECOC) <22, 1996, Oslo>
European Exhibition on Optical Communication (EEOC) <2, 1996, Oslo>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()
aluminium compounds; gallium arsenide; HEMT integrated circuits; iii-v semiconductors; indium compounds; integrated optics; integrated optoelectronics; optical receivers; optical waveguides; p-i-n photodiodes; time division multiplexing; ultrafast GaInAs/AlInAs/InP photoreceiver; waveguide architecture; InP-based photoreceiver oeic; bandwidth; pin-photodiode; integrated optical waveguide; coplanar travelling wave amplifier; HEMT ics; 27 GHz; inp; GaInAs-AlInAs-InP

Abstract
An InP-based photoreceiver OEIC with a bandwidth of 27 GHz is reported. The device consists of a pin-photodiode with integrated optical waveguide and a coplanar travelling wave amplifier being composed of four HEMTs.

: http://publica.fraunhofer.de/dokumente/N-13231.html