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1996
Conference Paper
Titel
Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture
Abstract
An InP-based photoreceiver OEIC with a bandwidth of 27 GHz is reported. The device consists of a pin-photodiode with integrated optical waveguide and a coplanar travelling wave amplifier being composed of four HEMTs.
Language
English
Tags
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aluminium compounds
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gallium arsenide
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HEMT integrated circuits
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iii-v semiconductors
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indium compounds
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integrated optics
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integrated optoelectronics
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optical receivers
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optical waveguides
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p-i-n photodiodes
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time division multiplexing
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ultrafast GaInAs/AlInAs/InP photoreceiver
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waveguide architecture
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InP-based photoreceiver oeic
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bandwidth
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pin-photodiode
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integrated optical waveguide
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coplanar travelling wave amplifier
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HEMT ics
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27 GHz
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inp
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GaInAs-AlInAs-InP